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SGP04N60 SGD04N60
Fast IGBT in NPT-technology
* 75% lower Eoff compared to previous generation C combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls G E - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 PG-TO-252-3-1 (D-PAK) - parallel switching capability (TO-220AB) (TO-252AA) * Pb-free lead plating; RoHS compliant 2 * Qualified according to JEDEC for target applications * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP04N60 SGD04N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, PG-TO-252: (reflow soldering, MSL3) Others: wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 260 C
1)
VCE 600V 600V
IC 4A 4A
VCE(sat)150C 2.3V 2.3V
Tj 150C 150C
Marking G04N60 G04N60
Package PG-TO-220-3-1 PG-TO-252-3-11
Symbol VCE IC
Value 600 9.4 4.9
Unit V A
ICpul s VGE EAS
19 19 20 25 V mJ
tSC Ptot
10 50
s W
VGE = 15V, VCC 600V, Tj 150C
2 1)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 Sep 07
SGP04N60 SGD04N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
Symbol RthJC RthJA RthJA
Conditions
Max. Value 2.5
Unit K/W
PG-TO-220-3-1 PG-TO-252-3-1
62 50
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 4 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 20 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 3 Typ. 2.0 2.3 4 3.1 264 29 17 24 7 40 max. 2.4 2.8 5
Unit
V
A 20 500 100 317 35 20 31 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 4 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =4 A V G E = 15 V
V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 1 5 0 C
-
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.2 Sep 07
1)
2
SGP04N60 SGD04N60
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 4 A, V G E = 0/ 15 V , R G =67 , 1) L = 18 0 nH , 1) C = 18 0 pF Energy losses include "tail" and diode reverse recovery. 22 15 237 70 0.070 0.061 0.131 26 18 284 84 0.081 0.079 0.160 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C =4 A , V G E = 0/ 15 V , R G = 67 , 1) L = 18 0 nH , 1) C = 18 0 pF Energy losses include "tail" and diode reverse recovery. 22 16 264 104 0.115 0.111 0.226 26 19 317 125 0.132 0.144 0.277 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.2 Sep 07
SGP04N60 SGD04N60
Ic
10A t p =2 s
20A
15 s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
T C =80C 10A T C =110C
1A
50 s 200 s 1ms
0.1A
DC
Ic
0A 10Hz
0.01A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 67)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
60W
12A
50W
10A
40W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
8A
30W
6A
20W
4A
10W
2A
0W 25C
50C
75C
100C
125C
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Rev. 2.2
Sep 07
SGP04N60 SGD04N60
15A
15A
12A
12A
VGE=20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
VGE=20V 9A 15V 13V 11V 9V 7V 5V
9A
6A
15V 13V 11V 9V 7V 5V
6A
3A
3A
0A 0V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
12A 10A 8A 6A 4A 2A 0A 0V
Tj=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
14A
4.0V
3.5V
IC = 8A
IC, COLLECTOR CURRENT
3.0V
2.5V
IC = 4A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V
-50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Rev. 2.2
Sep 07
SGP04N60 SGD04N60
td(off) t d(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns
tf
t d(on)
t d(on)
tr 10ns 0A 2A 4A 6A 8A 10A 10ns 0 50 100 150
tr 200
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 67, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 4A, Dynamic test circuit in Figure E)
5.5V
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V -50C 0C 50C 100C 150C typ. max.
t, SWITCHING TIMES
100ns
tf
td(on) tr 10ns 0C 50C 100C 150C
min.
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 4A, RG = 67, Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.2mA)
6
Rev. 2.2
Sep 07
SGP04N60 SGD04N60
0.6mJ
*) Eon and Ets include losses due to diode recovery.
0.4mJ
*) Eon and Ets include losses due to diode recovery.
0.5mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0.3mJ
0.4mJ
E ts *
E ts * 0.2mJ
0.3mJ E on * 0.2mJ E off 0.1mJ
E off 0.1mJ E on *
0.0mJ 0A
2A
4A
6A
8A
10A
0.0mJ 0
50
100
150
200
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 67, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 4A, Dynamic test circuit in Figure E)
0.3mJ
*) Eon and Ets include losses due to diode recovery. D=0.5 10 K/W
0
ZthJC, TRANSIENT THERMAL IMPEDANCE
0.2 0.1 0.05
E, SWITCHING ENERGY LOSSES
0.2mJ E ts *
10 K/W 0.02 0.01
R,(K/W) 0.815 0.698 0.941 0.046
R1
-1
0.1mJ
E on *
10 K/W
-2
, (s) 0.0407 5.24*10-3 4.97*10-4 4.31*10-5
R2
E off 0.0mJ 0C
single pulse
50C
100C
150C
10 K/W 1s
-3
C 1 = 1 / R 1 C 2 = 2 /R 2
10s 100s
1m s
10m s 100m s
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 4A, RG = 67, Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Rev. 2.2
Sep 07
SGP04N60 SGD04N60
25V C iss 20V
VGE, GATE-EMITTER VOLTAGE
15V
120V
480V
C, CAPACITANCE
100pF
10V
C oss
5V 10pF 0V 0nC
C rss
10nC
20nC
30nC
0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 4A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
70A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
11V 12V 13V 14V 15V
60A 50A 40A 30A 20A 10A 0A 10V
tsc, SHORT CIRCUIT WITHSTAND TIME
20 s
15 s
10 s
5 s
0 s 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Rev. 2.2
Sep 07
SGP04N60 SGD04N60
PG-TO-220-3-1
9
Rev. 2.2
Sep 07
SGP04N60 SGD04N60
P-TO252-3-11
10
Rev. 2.2
Sep 07
SGP04N60 SGD04N60
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
TC
Figure D. Thermal equivalent circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =180pF.
Published by Infineon Technologies AG,
11
Rev. 2.2
Sep 07
SGP04N60 SGD04N60
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 9/12/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
12
Rev. 2.2
Sep 07

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